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| HZM-N Series Silicon Epitaxial Planar Zener Diode for Stabilizer REJ03G0483-0500 (Previous: ADE-208-130D) Rev.5.00 Dec 14, 2004 Features * Wide spectrum from 1.9 V through 38 V of zener voltage provide flexible application. * MPAK Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HZM-N Series Laser Mark Let to Mark Code Package Code MPAK Pin Arrangement 3 1 2 (Top View) 1. NC 2. Anode 3. Cathode Rev.5.00, Dec.14.2004, page 1 of 7 HZM-N Series Absolute Maximum Ratings (Ta = 25C) Item Power dissipation Junction temperature Storage temperature Note: 1. See Fig. 3. Symbol Pd * Tj Tstg 1 Value 200 150 -55 to +150 Unit mW C C Electrical Characteristics (Ta = 25C) Zener Voltage VZ (V)* Type HZM2.0N HZM2.2N HZM2.4N HZM2.7N Grade B B B B B1 B2 B B1 B2 HZM3.3N B B1 B2 B B1 B2 HZM3.9N B B1 B2 B B1 B2 HZM4.7N B3 B B1 B2 HZM5.1N B3 B B1 B2 HZM5.6N B3 B B1 B2 B3 Note: Min 1.90 2.10 2.30 2.50 2.50 2.65 2.80 2.80 2.95 3.10 3.10 3.25 3.40 3.40 3.55 3.70 3.70 3.87 4.01 4.01 4.15 4.28 4.42 4.42 4.55 4.69 4.84 4.84 4.98 5.14 5.31 5.31 5.49 5.67 1 Test Condition Max 2.20 2.40 2.60 2.90 2.75 2.90 3.20 3.05 3.20 3.50 3.35 3.50 3.80 3.65 3.80 4.10 3.97 4.10 4.48 4.21 4.34 4.48 4.90 4.61 4.75 4.90 5.37 5.04 5.20 5.37 5.92 5.55 5.73 5.92 5 5 5 5 5 IZ (mA) 5 5 5 5 Reverse Current Test IR (A) Condition Max 120 120 120 120 VR (V) 0.5 0.7 1.0 1.0 Dynamic Resistance Test rd () Condition Max 100 100 100 110 IZ (mA) 5 5 5 5 HZM3.0N 5 50 1.0 120 5 20 1.0 130 5 HZM3.6N 5 10 1.0 130 5 10 1.0 130 5 HZM4.3N 5 10 1.0 130 5 10 1.0 130 5 5 1.5 130 5 5 2.5 80 5 1. Tested with pulse (PW = 40 ms) Rev.5.00, Decl.14.2004, page 2 of 7 HZM-N Series Zener Voltage VZ (V)* Type HZM6.2N Grade B B1 B2 B3 HZM6.8N B B1 B2 B3 HZM7.5N B B1 B2 B3 HZM8.2N B B1 B2 B3 HZM9.1N B B1 B2 B3 HZM10N B B1 B2 B3 HZM11N B B1 B2 B3 HZM12N B B1 B2 B3 HZM13N B B1 B2 B3 5M15N B B1 B2 B3 HZM16N B B1 B2 B3 HZM18N B B1 B2 B3 Note: Min 5.86 5.86 6.06 6.26 6.47 6.47 6.65 6.86 7.06 7.06 7.28 7.52 7.76 7.76 8.02 8.28 8.56 8.56 8.85 9.15 9.45 9.45 9.77 10.11 10.44 10.44 10.76 11.10 11.42 11.42 11.74 12.08 12.47 12.47 12.91 13.37 13.84 13.84 14.34 14.85 15.37 15.37 15.85 16.35 16.94 16.94 17.56 18.21 1 Reverse Current IR (A) Max 2 Test Condition VR (V) 3.0 Dynamic Resistance rd () Max 50 Test Condition IZ (mA) 5 Max 6.53 6.12 6.33 6.53 7.14 6.73 6.93 7.14 7.84 7.36 7.60 7.84 8.64 8.10 8.36 8.64 9.55 8.93 9.23 9.55 10.55 9.87 10.21 10.55 11.56 10.88 11.22 11.56 12.60 11.90 12.24 12.60 13.96 13.03 13.49 13.96 15.52 14.46 14.98 15.52 17.09 16.01 16.51 17.09 19.03 17.70 18.35 19.03 Test Condition IZ (mA) 5 5 2 3.5 30 5 5 2 4.0 30 5 5 2 5.0 30 5 5 2 6.0 30 5 5 2 7.0 30 5 5 2 8.0 30 5 5 2 9.0 35 5 5 2 10.0 35 5 5 2 11.0 40 5 5 2 12.0 40 5 5 2 13.0 45 5 1. Tested with pulse (PW = 40 ms) Rev.5.00, Decl.14.2004, page 3 of 7 HZM-N Series Zener Voltage VZ (V)* Type HZM20 Grade B B1 B2 B3 HZM22N B B1 B2 B3 HZM24N B B1 B2 B3 HZM27N HZM30N HZM33N HZM36N Note: B B B B Min 18.86 18.86 19.52 20.21 20.88 20.88 21.54 22.23 22.93 22.93 23.72 24.54 25.10 28.00 31.00 34.00 1 Reverse Current IR (A) Max 2 Test Condition VR (V) 15.0 Dynamic Resistance rd () Max 50 Test Condition IZ (mA) 5 Max 21.08 19.70 20.39 21.08 23.17 21.77 22.47 23.17 25.57 23.96 24.78 25.57 28.90 32.00 35.00 38.00 Test Condition IZ (mA) 5 5 2 17.0 55 5 5 2 19.0 60 5 2 2 2 2 2 2 2 2 21.0 23.0 25.0 27.0 70 80 80 90 2 2 2 2 1. Tested with pulse (PW = 40 ms) Rev.5.00, Decl.14.2004, page 4 of 7 HZM-N Series Mark Code Type HZM2.0N HZM2.2N HZM2.4N HZM2.7N HZM3.0N HZM3.3N HZM3.6N HZM3.9N HZM4.3N Grade B B B B1 B2 B1 B2 B1 B2 B1 B2 B1 B2 B1 B2 B3 HZM4.7N B1 B2 B3 B1 B2 B3 HZM5.6N B1 B2 B3 Mark No. 20- 22- 24- 271 272 301 302 331 332 361 362 391 392 431 432 433 471 472 473 511 512 513 561 562 563 HZM11N HZM9.1N HZM7.5N Type HZM6.2N Grade B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 Mark No. 621 622 623 681 682 683 751 752 753 821 822 823 911 912 913 101 102 103 111 112 113 121 122 123 HZM24N HZM20N HZM16N Type HZM13N Grade B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 B B B B Mark No. 131 132 133 151 152 153 161 162 163 181 182 183 201 202 203 221 222 223 241 242 243 27- 30- 33- 36- HZM6.8N HZM15N HZM8.2N HZM18N HZM10N HZM22N HZM5.1N HZM12N HZM27N HZM30N HZM33N HZM36N Example of Marking 1. One grade type (grade type B) 20 HZM2.0NB 30 - Underline HZM30NB 2. Two grade type (B1, B2) 301 HZM3.0NB1 302 HZM3.0NB2 3. Three grade type (B1, B2, B3) 431 HZM4.3NB1 432 HZM4.3NB2 433 HZM4.3NB3 Notes: 1. The grade B type includes from B1 min. to B3 (or B2) max. 2. B grade is standard and has better delivery, These are marked one of B1, B2, B3. Ordering P/N HZM-N series are delivered taped (TL/TR). 3. Choose one taping code and adhere to parts No. Example: HZM2.0NBTL (or TR), HZM2.2NBTL (or TR), HZM36NBTL (or TR). (Grade B type) HZM2.7NB1TL (or TR), HZM2.7NB2TL (or TR), HZM24NB3TL (or TR). (Grade B1, B2, B3 type) Rev.5.00, Decl.14.2004, page 5 of 7 HZM-N Series Main Characteristic HZM2.4N HZM3.0N HZM3.6N HZM4.3N HZM5.1N HZM6.2N HZM7.5N HZM8.2N HZM9.1N HZM10N HZM11N HZM13N HZM16N 10 8 Zener Current IZ (mA) HZM2.0N HZM6.8N 6 HZM18N HZM15N HZM20N HZM22N HZM30N HZM24N HZM33N HZM12N 4 2 0 0 4 8 12 16 20 24 HZM27N 28 32 36 HZM36N 40 Zener Voltage VZ (V) Fig.1 Zener current vs. Zener voltage 0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 -0.01 -0.02 -0.03 -0.04 -0.05 -0.06 -0.07 0 250 %/C 45 40 35 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 1.0mm Zener Voltage Temperature Coefficient Z (mV/C) Zener Voltage Temperature Coefficient Z (%/C) Power Dissipation Pd (mW) 200 Cu Foil mV/C 150 Printed circuit board 25 x 62 x 1.6t mm Material: Glass Epoxy Resin+Cu Foil 100 50 5 10 15 20 25 30 35 40 45 0 0 50 100 150 0.8mm 200 Zener Voltage VZ (V) Fig.2 Temperature Coefficient vs. Zener voltage Ambient Temperature Ta (C) Fig.3 Power Dissipation vs. Ambient Temperature Rev.5.00, Decl.14.2004, page 6 of 7 HZM-N Series Package Dimensions As of January, 2003 Unit: mm (0.65) 0.10 3-0.4 + 0.05 - 0.16 - 0.06 + 0.10 1.5 0.15 + 0.2 - 0.6 0 - 0.1 (0.95) (0.95) 1.9 0.2 0.3 2.8 + 0.1 - (0.3) + 0.2 1.1 - 0.1 (0.65) 2.8 Package Code JEDEC JEITA Mass (reference value) MPAK -- Conforms 0.011 g Rev.5.00, Decl.14.2004, page 7 of 7 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. 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